rej03g1236-0600 rev.6.00 oct 01, 2009 page 1 of 6 HAT2202C silicon n channel mos fet power switching rej03g1236-0600 rev.6.00 oct 01, 2009 features ? low on-resistance r ds(on) = 31 m typ. (at v gs = 4.5 v) ? low drive current. ? high density mounting ? 2.5 v gate drive devices. outline renesas package code: pwsf0006ja-a (package name: cmfpak-6) 1. source 2. drain 3. drain 4. drain 5. drain 6. gate 1 2 3 6 5 4 indexband g d s 6 1 5 d 2 d 3 d 4 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 20 v gate to source voltage v gss 12 v drain current i d 3 a drain peak current i d (pulse) note1 12 a body - drain diode reverse drain current i dr 3 a channel dissipation pch note 2 900 mw channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. when using the glass epoxy board. (fr4 40 40 1.6 mm)
HAT2202C rej03g1236-0600 rev.6.00 oct 01, 2009 page 2 of 6 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 20 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 12 ? ? v i g = 100 a, v ds = 0 gate to source leakage current i gss ? ? 10 a v gs = 10v, v ds = 0 drain to source leakage current i dss ? ? 1 a v ds = 20 v, v gs = 0 gate to source cutoff voltage v gs(th) 0.4 ? 1.4 v i d = 10 v, i d = 1 ma ? 31 40 m i d = 1.5 a, v gs =4.5 v note3 drain to source on state resistance r ds(on) ? 43 55 m i d = 1.5 a, v gs = 2.5 v note3 forward transfer admittance |y fs | 6.5 9.5 ? s i d = 1.5 a, v ds = 10 v note3 input capacitance ciss ? 520 ? pf output capacitance coss ? 115 ? pf reverse transfer capacitance crss ? 60 ? pf v ds = 10 v, v gs = 0, f = 1 mhz total gate charge qg ? 6 ? nc gate to source charge qgs ? 1 ? nc gate to drain charge qgd ? 1.4 ? nc v dd = 10 v, v gs = 4.5 v, i d = 3 a turn - on delay time t d(on) ? 9 ? ns rise time t r ? 8 ? ns turn - off delay time t d(off) ? 28 ? ns fall time t f ? 6 ? ns i d = 1.5 a, v gs = 10 v, v dd =10 v, r l = 6.7 , r g = 4.7 body - drain diode forward voltage v df ? 0.8 1.1 v i f = 3 a, v gs = 0 note3 notes: 3. pulse test
HAT2202C rej03g1236-0600 rev.6.00 oct 01, 2009 page 3 of 6 main characteristics channel dissipation pch (w) ambient temperature ta (c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics gate to source voltage v gs (v) drain to source voltage v ds(on) (mv) drain to source saturation voltage vs. gate to source voltage drain current i d (a) drain to source on state resistance r ds(on) (m ) static drain to source on state resistance vs. drain current 1.6 1.2 0.8 0.4 0 50 100 150 200 30 10 3 1 0.3 0.1 0.1 0.3 0.03 1 3 10 30 100 20 16 12 8 4 0 24 6810 20 16 12 8 4 0 12 34 5 0.03 0.01 100 1.4 v 1.6 v pulse test 2.0 v 120 80 40 0 24 6 8 10 0.1 10 1 100 100 1000 10 160 3 a 1.5 a 1.8 v 2.5 v 4.5 v v gs = 1.2 v 2.5 v pw = 100 s dc operation pw = 10 ms pw = 1 ms 25c 75c i d = 1 a v gs = 4.5 v test condition : when using the glass epoxy board (fr4 40 x 40 x 1.6 mm) tc = ?25c v ds = 10 v pulse test pulse test pulse test ta = 25c,1shot pulse when using the fr4 board. operation in this area is limited by r ds(on) pw =10 s
HAT2202C rej03g1236-0600 rev.6.00 oct 01, 2009 page 4 of 6 case temperature tc (c) static drain to source on state resistance r ds(on) (m ) static drain to source on state resistance vs. temperature forward transfer admittance |y fs | (s) drain current i d (a) forward transfer admittance vs. drain current capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics drain current i d (a) switching time t (ns) switching characteristics source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage 75 60 45 30 15 ?25 0 25 50 75 100 125 150 0 0.3 0.1 1 10 100 30 10 3 1 0.3 0.1 3 25 c 75 c v gs = 2.5 v 1, 1.5 ,3 a 0 10 20 1000 100 300 40 0 8 30 6 20 4 10 2 24 6810 0 100 1 10 0.1 0.3 1 3 10 30 10 0 30 10 ciss coss i d = 3 a v dd v gs 51525 0 0.4 0.8 1.2 1.6 2.0 20 8 v gs = 0 v 4 12 16 3 a i d = 1, 1.5 a 4.5 v 5 v crss v gs = 4.5 v, v dd = 10 v rg = 4.7 , duty 1 % tc = ?25 c pulse test v ds = 10 v pulse test v gs = 0 f = 1 mhz v dd = 5 v 10 v 20 v v dd = 20 v 10 v 5 v t r t f t d(off) t d(on) pulse test
HAT2202C rej03g1236-0600 rev.6.00 oct 01, 2009 page 5 of 6 vin monitor d.u.t. vin 10 v r l v dd = 10 v vout monitor 4.7 switching time test circuit waveform t r t f t d(on) vin 90% 90% 10% 10% vout t d(off) 90% 10%
HAT2202C rej03g1236-0600 rev.6.00 oct 01, 2009 page 6 of 6 package dimensions d a aa a a a 2 a 1 l l p s s s y b b 2 l 1 m x eh e e e e 1 c pattern of term i na l pos i t i on areas a a 1 a 2 b b 1 c c 1 d e e h e l l p x y b 2 e 1 l 1 0 . 6 0 0 . 7 0 . 15 0 . 1 1 . 9 1 . 6 2 . 05 0 . 1 0 . 15 0 . 22 0 . 2 0 . 13 0 . 11 2 . 0 1 . 7 0 . 65 2 . 1 0 . 2 1 . 65 0 . 8 0 . 01 0 . 79 0 . 3 0 . 15 2 . 1 1 . 8 2 . 15 0 . 3 0 .4 5 0 . 05 0 . 05 0 . 35 0 . 5 d i mens i on i n m illi meters reference symbo l m i n n om max 0 . 0065g mass [t yp .] cm f pa k- 6 / cm f pa k- 6v pws f 0006ja - a r ene sas code j eit a package code prev i ous code b a - a sect i on b 1 c 1 c package n ame cm f pa k- 6 ordering information part no. quantity shipping container HAT2202C-el-e 3000 pcs taping
notes: 1. this document is provided for reference purposes only so that renesas customers may select the appropriate renesas product s for their use. renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of renesas or any third party with respect to the information in this document. 2. renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of t he use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. you should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. when exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. all information included in this document such as product data, diagrams, charts, programs, algorithms, and application ci rcuit examples, is current as of the date this document is issued. such information, however, is subject to change without any prior notice. before purchasing or using any renesas products listed in this document, please confirm the latest product information with a renesas sales office. also, please pay regular and careful attentio n to additional and different information to be disclosed by renesas such as that disclosed through our website. (http://www.renesas.com ) 5. renesas has used reasonable care in compiling the information included in this document, but renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. when using or otherwise relying on the information in this document, you should evaluate the information in light of the t otal system before deciding about the applicability of such information to the intended application. renesas makes no representations, warranties or guaranties regarding th e suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this do cument or renesas products. 7. with the exception of products specified by renesas as suitable for automobile applications, renesas products are not desi gned, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of h uman injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion co ntrol, aerospace and aeronautics, nuclear power, or undersea communication transmission. if you are considering the use of our products for such purposes, please contact a r enesas sales office beforehand. renesas shall have no liability for damages arising out of the uses set forth above. 8. notwithstanding the preceding paragraph, you should not use renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to us e renesas products in any of the foregoing applications shall indemnify and hold harmless renesas technology corp., its affiliated companies and their officers, dir ectors, and employees against any and all damages arising out of such applications. 9. you should use the products described herein within the range specified by renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas sha ll have no liability for malfunctions or damages arising out of the use of renesas products beyond such specified ranges. 10. although renesas endeavors to improve the quality and reliability of its products, ic products have specific characteristic s such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. please be sure to implement safety measures to guard against the poss ibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas product, such as safety design for hardware and software includin g but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. among others, sinc e the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. in case renesas products listed in this document are detached from the products to which the renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. you should implement safety measures so that renesas products may not be easily detached from your products. renesas shall have no liability for damages arising out of such detachment. 12. this document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from r enesas. 13. please contact a renesas sales office if you have any questions regarding the information contained in this document, renes as semiconductor products, or if you have any other inquiries. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com refer to " http://www.renesas.com/en/network " for the latest and detailed information. renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500, fax: <1> (408) 382-7501 renesas technology europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k. tel: <44> (1628) 585-100, fax: <44> (1628) 585-900 renesas technology (shanghai) co., ltd. unit 204, 205, aziacenter, no.1233 lujiazui ring rd, pudong district, shanghai, china 200120 tel: <86> (21) 5877-1818, fax: <86> (21) 6887-7858/7898 renesas technology hong kong ltd. 7th floor, north tower, world finance centre, harbour city, canton road, tsimshatsui, kowloon, hong kong tel: <852> 2265-6688, fax: <852> 2377-3473 renesas technology taiwan co., ltd. 10th floor, no.99, fushing north road, taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 3518-3399 renesas technology singapore pte. ltd. 1 harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas technology korea co., ltd. kukje center bldg. 18th fl., 191, 2-ka, hangang-ro, yongsan-ku, seoul 140-702, korea tel: <82> (2) 796-3115, fax: <82> (2) 796-2145 renesas technology malaysia sdn. bhd unit 906, block b, menara amcorp, amcorp trade centre, no.18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, m alaysia tel: <603> 7955-9390, fax: <603> 7955-9510 renesas sales offices ? 200 9. re nesas technology corp ., all rights reser v ed. printed in ja pan. colophon .7.2
|
